Micro-Temperature Measurements on Semiconductor Laser Mirrors by Reflectance Modulation: A Newly Developed Technique for Laser Characterization
- 1 December 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (12R)
- https://doi.org/10.1143/jjap.32.5514
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Estimation of the reliability of 0.98 μm InGaAs/GaAs strained quantum well lasersJournal of Applied Physics, 1992
- Arrhenius parameters for the rate process leading to catastrophic damage of AlGaAs-GaAs laser facetsJournal of Applied Physics, 1992
- Junction-side up operation of (Al)GaInP lasers with very low threshold currentsElectronics Letters, 1992
- Diode laser degradation mechanisms: A reviewProgress in Quantum Electronics, 1991
- Very high-power (425 mW) AlGaAs SQW-GRINSCH ridge laser with frequency-doubled output (41 mW at 428 nm)IEEE Journal of Quantum Electronics, 1991
- Localised temperature dynamics of GaAlAs laser facets investigated by Raman microprobe measurementsElectronics Letters, 1990
- Influence of local heating on current-optical output power characteristics in Ga1−xAlxAs lasersJournal of Applied Physics, 1986
- High-power ridge-waveguide AlGaAs GRIN-SCH laser diodeElectronics Letters, 1986
- Lattice thermal resistivity of III–V compound alloysJournal of Applied Physics, 1983
- Dispersion of the Index of Refraction Near the Absorption Edge of SemiconductorsPhysical Review B, 1964