Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H Films

Abstract

Doping of Si:F:H and Si:H with P has been performed by a glow-discharge technique using PH₃/SiF₄+H₂, PF₅/SiF₄+H₂, PH₃/SiH₄+H₂ and PF₅/SiH₄+H₂ gaseous mixtures, and high conductive films over 10⁰ Ω^-1 cm^-1 have been obtained. It has also been made clear from X-ray diffraction and Raman-scattering measurements that all the P-doped Si:F:H films (P/Si>5×10^-4) as well as high conductive Si:H films deposited under high RF power condition are polycrystalline, while Si:H films prepared under low power remain amorphous and their conductivity is less than 10^-2 Ω^-1 cm^-1. It is likely that film conductivity amounting to 10⁰ Ω^-1 cm^-1 should be ascribed to its polycrystalline structure.