Quantitative Measurement of Semiconductor Homogeneity from Plasma Edge
- 1 August 1962
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 33 (8), 2466-2468
- https://doi.org/10.1063/1.1728995
Abstract
The carrier concentration homogeneity in a semiconductor can be quantitatively measured from the position of the plasma edge. This has been demonstrated for an InAs sample for which changes of homogeneity of about 0.5% have been measured. This plasma edge method for measuring carrier concentration inhomogeneities is at least an order of magnitude more sentitive than other methods reported to date and can be applied for any semiconductor that has a well‐defined plasma edge.This publication has 8 references indexed in Scilit:
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