Plasma Etching of CVD Grown Cubic SiC Single Crystals
- 1 November 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (11A), L873
- https://doi.org/10.1143/jjap.24.l873
Abstract
Plasma etching of CVD grown cubic SiC single crystals with CF4+O2 mixture gas was investigated for the first time. The O2 gas composition, rf power and pressure dependence of the etching rate were clarified. The maximum etching rate was obtained with the O2 gas composition of 67%. The ratio of the etching rate between cubic SiC and Cr was found to be about 8.3, which indicates Cr as a good etching mask for cubic SiC.Keywords
This publication has 3 references indexed in Scilit:
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- Reactive Ion-Beam Etching of Silicon CarbideJapanese Journal of Applied Physics, 1981
- Surface Polarity and Etching of Beta-Silicon CarbideJournal of the Electrochemical Society, 1970