High current gain graded GaN/InGaN heterojunction bipolar transistors grown on sapphire and SiC substrates by metalorganic chemical vapor deposition
- 14 December 2006
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 298, 852-856
- https://doi.org/10.1016/j.jcrysgro.2006.10.231
Abstract
No abstract availableKeywords
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