High carrier mobility in transparent Ba1−xLaxSnO3 crystals with a wide band gap

Abstract

We discovered that perovskite (Ba,La)SnO₃ can have excellent carrier mobility even though its band gap is large. The Hall mobility of Ba_0.98La_0.02SnO₃ crystals with the n-type carrier concentration of ∼8-10 × 10¹⁹cm⁻³ is found to be ∼103 cm² V⁻¹ s⁻¹ at room temperature, and the precise measurement of the band gap Δ of a BaSnO₃ crystal shows Δ = 4.05 eV, which is significantly larger than those of other transparent conductive oxides. The high mobility with a wide band gap indicates that (Ba,La)SnO₃ is a promising candidate for transparent conductor applications and also epitaxial all-perovskite multilayer devices.