Carrier removal by implanted IONS in GaAs
- 1 January 1980
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 49 (1-3), 169-172
- https://doi.org/10.1080/00337578008243088
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Carrier removal profiles from oxygen implanted GaAsElectronics Letters, 1978
- A comparison of Sn-, Ge-, Se- and Te-ion-implanted GaAsJournal of Physics D: Applied Physics, 1977
- Tellurium implantation in GaAsSolid-State Electronics, 1977
- Semi-insulating layers of GaAs by oxygen implantationJournal of Applied Physics, 1976
- A new thin film encapsulant for ion-implanted GaAsThin Solid Films, 1975
- Electrical and cathodoluminescence measurements on ion implanted donor layers in GaAsSolid-State Electronics, 1975
- Optical and electrical properties of proton-bombarded p-type GaAsJournal of Applied Physics, 1973
- Spatial distribution of energy deposited into atomic processes in ion-implanted siliconRadiation Effects, 1970
- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968