Epitaxial growth of Fe on GaAs by metalorganic chemical vapor deposition in ultrahigh vacuum
- 15 November 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (10), 972-974
- https://doi.org/10.1063/1.93359
Abstract
Fe epitaxial films have been grown on GaAs(100) by thermal dissociation of Fe (CO)5 in a high vacuum environment. In situ low‐energy electron diffraction (LEED) and Auger spectroscopy have been used to study the MOCVD process and to characterize the growing films. Excellent film quality is evidenced by the observed small ferromagnetic resonance linewidth.Keywords
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