The lifetime of electrons in InSb, studied using the de Haas-van Alphen effect

Abstract

The de Haas-van Alphen effect has been studied, using a vibrating sample magnetometer in samples of heavily doped n type InSb having carrier concentrations in the range approximately 10²³ to 2*10²⁴ m^-3. The theory of the dHvA effect in the high field (low phase) regime has been considered. The measured Dingle (scattering) temperatures are found to be appreciably enhanced by phase smearing arising from inhomogeneities in the carrier concentration. The extent of the inhomogeneity has been determined and values of up to approximately 20% have been found. Electronic lifetimes deduced from the dHvA effect measurements are in satisfactory agreement with a Born approximation calculation of scattering by ionized impurities.