The EFG process applied to the growth of silicon ribbons*
- 1 April 1975
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 4 (2), 255-279
- https://doi.org/10.1007/bf02655405
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Observations on the relationship between structure and electrical performance in silicon ribbon solar cellsMaterials Research Bulletin, 1974
- Growth of ribbon-shaped crystals of gadolinium gallium garnet for bubble memory substratesJournal of Electronic Materials, 1974
- Concentration, Solubility, and Equilibrium Distribution Coefficient of Nitrogen and Oxygen in Semiconductor SiliconJournal of the Electrochemical Society, 1973
- Edge-defined, film-fed growth (EFG) of silicon ribbonsMaterials Research Bulletin, 1972
- Growth of controlled profile crystals from the melt: Part I - Sapphire filamentsMaterials Research Bulletin, 1971
- Concentration and Behavior of Carbon in Semiconductor SiliconJournal of the Electrochemical Society, 1970
- Beryllium as an Acceptor in SiliconJournal of the Electrochemical Society, 1970
- Constitutional Supercooling during the Crystal Growth of Germanium and SiliconJapanese Journal of Applied Physics, 1963
- Dendritic Growth of Germanium CrystalsPhysical Review B, 1959
- GROWTH TWINS IN GERMANIUMCanadian Journal of Physics, 1956