Formation process of MnBi thin films

Abstract

MnBi thin films were prepared by successive deposition of a Bi layer and then a Mn layer onto a glass substrate, followed by an anneal up to 300°C. In order to investigate the details of formation of MnBi films, the samples were quenched from various annealing temperatures and examined by α-ray backscattering and X-ray diffraction. It was found that Mn atoms leaving Mn crystals migrate very fast in the well-oriented Bi layer to form well-oriented MnBi crystals at the expense of Bi crystals.