Low-noise microwave f.e.t.s fabricated by molecular-beam epitaxy

Abstract

The growth of m.b.e. GaAs suitable for f.e.t. fabrication is reported. The m.b.e. structure consists of an n+ = 2.5×1018 cm−3 contact layer on top of an n+ = 3.5×1017 cm−3 active layer. Using this material, f.e.t.s. have been fabricated that have a minimum noise figure of 1.5 dB with an associated gain of 15 dB at 8 GHz. These are the best results yet reported for low-noise m.b.e. GaAs f.e.t.s.