Low-threshold single quantum well (60 Å) GaAlAs lasers grown by MO-CVD with Mg as p-type dopant

Abstract

The letter reports low-threshold MO-CVD GaAlAs DH (∼7730 Å) lasers containing Mg as the p-type dopant. The structure consists of symmetric stepped index cladding layers on both sides of a thin single quantum well (∼60 Å) active region. Broad-area threshold current densities of 460 A cm−2 and 270 A cm−2 are achieved for cavity lengths of 250 and 500 μm, respectively. Broad-area room-temperature lasers without facet coatings emit in excess of 400 mW/facet CW output power.