Light-Induced Increase in Domain-Wall Stiffness in Si-Doped YIG
- 1 March 1970
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (3), 1248-1249
- https://doi.org/10.1063/1.1658895
Abstract
The initial susceptibility of Si‐doped YIG is reduced by irradiation with light. This effect is explained by a simple two‐center model, a strongly anisotropic center being formed from a less anisotropic one by light‐induced electron transfer. Domain walls are pinned by these strongly anisotropic centers, of density n. If n is small enough, the stiffness will be proportional to n, since by local wall deformations each center within the wall can be made to occupy a site of lowest energy. For larger n this is no longer possible: instead, the optimum wall position will be determined by the statistical fluctuations of the center distribution, and the stiffness will be proportional to n1/2.Keywords
This publication has 3 references indexed in Scilit:
- Photomagnetic effectsIEEE Transactions on Magnetics, 1969
- Ferromagnetic Resonance in Si-Doped YIGJournal of Applied Physics, 1969
- Photomagnetic Effect in a Chalcogenide SpinelPhysical Review Letters, 1968