Low interface state density SiO2 deposited at 300 °C by remote plasma-enhanced chemical vapor deposition on reconstructed Si surfaces

Abstract

A 300 °C process has been used to deposit high‐quality SiO₂ on Si. The process is based on remote plasma‐enhanced chemical vapor deposition. In this process excited species from a remote oxygen plasma interact with silane in the deposition zone. A hydrogen plasma is used to clean the silicon surface in situ just prior to deposition. After a 400 °C post‐metallization anneal, interface‐state densities as low as 3.7×10¹⁰ cm⁻² eV⁻¹ were measured with a fixed charge density of 2×10¹¹ cm⁻². The films exhibited good breakdown integrity, sustaining fields of 9–10 MV cm⁻¹. The Si/SiO₂ interface‐state density directly correlates with the quality of reflection high‐energy electron diffraction patterns from the silicon surface just prior to oxide deposition.