Extremely low threshold current strained InGaAs/AlGaAs lasers by molecular beam epitaxy
- 29 April 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (17), 1816-1818
- https://doi.org/10.1063/1.105098
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried-heterostructure quantum well lasers grown by molecular beam epitaxyApplied Physics Letters, 1989
- Reduction of lasing threshold current density by the lowering of valence band effective massJournal of Lightwave Technology, 1986
- Band-structure engineering for low-threshold high-efficiency semiconductor lasersElectronics Letters, 1986
- The influence of bulk nonradiative recombination in the wide band-gap regions of molecular beam epitaxially grown GaAs-AlxGa1−xAs DH lasersApplied Physics Letters, 1978