Intentional ρ-type doping by carbon in metalorganic MBE of GaAs
- 1 March 1986
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 15 (2), 57-59
- https://doi.org/10.1007/bf02649903
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- GaAs growth in metal–organic MBEJournal of Vacuum Science & Technology B, 1985
- Origin of Surface Defects on Molecular Beam Epitaxially Grown GaAsJapanese Journal of Applied Physics, 1984
- Metalorganic CVD of GaAs in a molecular beam systemJournal of Crystal Growth, 1981