Few-electron quantum dot circuit with integrated charge read out
Top Cited Papers
- 30 April 2003
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 67 (16), 161308
- https://doi.org/10.1103/physrevb.67.161308
Abstract
We report on the realization of a few-electron double quantum dot defined in a two-dimensional electron gas by means of surface gates on top of a GaAs/AlGaAs heterostructure. Two quantum point contacts are placed in the vicinity of the double quantum dot and serve as charge detectors. These enable determination of the number of conduction electrons on each dot. This number can be reduced to zero, while still allowing transport measurements through the double dot. Microwave radiation is used to pump an electron from one dot to the other by absorption of a single photon. The experiments demonstrate that this quantum dot circuit can serve as a good starting point for a scalable spin-qubit system.Keywords
All Related Versions
This publication has 11 references indexed in Scilit:
- Electron transport through double quantum dotsReviews of Modern Physics, 2002
- Current Rectification by Pauli Exclusion in a Weakly Coupled Double Quantum Dot SystemScience, 2002
- Manipulating the Quantum State of an Electrical CircuitScience, 2002
- Charge Distribution in a Kondo-Correlated Quantum DotPhysical Review Letters, 2002
- Few-electron quantum dotsReports on Progress in Physics, 2001
- Epitaxially Self-Assembled Quantum DotsPhysics Today, 2001
- Radio-Frequency Single-Electron Transistor as Readout Device for Qubits: Charge Sensitivity and BackactionPhysical Review Letters, 2001
- Quantum computation with quantum dotsPhysical Review A, 1998
- Measurements of Coulomb blockade with a noninvasive voltage probePhysical Review Letters, 1993
- Single-Electron Pump Based on Charging EffectsEurophysics Letters, 1992