Use of quantum-well superlattices to obtain a high figure of merit from nonconventional thermoelectric materials
- 6 December 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (23), 3230-3232
- https://doi.org/10.1063/1.110207
Abstract
Currently, the materials with the highest thermoelectric figure of merit (ZT) are one‐band materials. The presence of both electrons and holes lowers ZT, so two‐band materials such as semimetals are not useful thermoelectric materials. However, by preparing these materials in the form of two‐dimensional quantum‐well superlattices, it is possible to separate the two bands and transform the material to an effective one‐carrier system. We have investigated theoretically the effect of such an approach and our results indicate that a significant increase in ZT may be achieved. This result allows the possibility of using a new class of materials as thermoelectric refrigeration elements.Keywords
This publication has 7 references indexed in Scilit:
- Growth and characterization of epitaxial bismuth filmsPhysical Review B, 1988
- Magneto-optical determination of the HgTe-CdTe superlattice band structurePhysical Review B, 1986
- Preparation and x-ray diffraction studies of compositionally modulated PbTe/Bi filmsThin Solid Films, 1984
- Frozen-in defects in bismuth in relation to its magnetoresistivity and thermoelectric powerProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1972
- Alfvén-Wave Propagation in Solid-Stae Plasmas. III. Quantum Oscillations of the Fermi Surface of BismuthPhysical Review B, 1969
- The crystal structure of arsenic at 4.2, 78 and 299°KJournal of Applied Crystallography, 1969
- Transport Properties of Bismuth Single CrystalsJournal of Applied Physics, 1963