Rendering barium titanate semiconductive by doping with rareearth elements
- 1 January 1988
- journal article
- research article
- Published by Taylor & Francis in Ferroelectrics
- Vol. 83 (1), 187-191
- https://doi.org/10.1080/00150198808235470
Abstract
Distribution of doping cations between A and B sites of perovskite ABO3 structure obeys certain conditions derived in terms of energy. These can be applied to predict semiconducting BaTiO3-based compositions, to account for yet unexplained anomalies in concentrational dependencies of electrical resistivity and Curie temperature, and to understand the relatively unimportant effect of doping in the case of solid solutions such as Ba1−x Sr x TiO3 and Ba1−x Ca x TiO3.Keywords
This publication has 2 references indexed in Scilit:
- Dopant distribution between A and B sites in PbZr0.95Ti0.05O3 ceramics of type ABO3Ferroelectrics, 1978
- A New Method of Determining Electronegativity from Other Atomic PropertiesPhysical Review B, 1946