Hole injection into silicon from ions in solution
- 1 February 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (2), 1233-1235
- https://doi.org/10.1063/1.330535
Abstract
It is shown that ions in solution with an ’’energy level’’ below the valence band edge of n-silicon can inject holes, whereas weaker oxidizing agents in solution cannot inject holes. The injection is detected by the collection of the holes at the far side of the thin silicon wafer using a reverse biased silicon/electrolyte Schottky barrier diode.Keywords
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