Multiple liquid phase epitaxy of In1−xGaxP1−zAsz double-heterojunction lasers: The problem of lattice matching
- 1 July 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (1), 40-42
- https://doi.org/10.1063/1.89472
Abstract
Multiple liquid phase epitaxy of In1−xGaxP1−z Asz‐InP double heterojunctions, from a single set of In‐rich melts, is demonstrated, and is shown to be a useful technique for the study of the problem of lattice matching at heterojunction interfaces and for growing large numbers of low‐threshold (’’defect‐free’’) DH laser wafers (λ∼1 μm).Keywords
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