Characteristics of InxGa1 − xN/GaN grown by LPMOVPE with the variation of growth temperature
- 1 December 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 182 (1-2), 6-10
- https://doi.org/10.1016/s0022-0248(97)00317-5
Abstract
No abstract availableKeywords
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