High resolution electron microscopy of interfaces between epitaxial thin films and semiconductors
- 31 December 1984
- journal article
- Published by Elsevier in Ultramicroscopy
- Vol. 14 (1-2), 1-10
- https://doi.org/10.1016/0304-3991(84)90101-3
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- The importance of beam alignment and crystal tilt in high resolution electron microscopyUltramicroscopy, 1983
- Analysis of epitaxial fluoride-semiconductor interfacesApplied Physics Letters, 1983
- Electron microscope studies of a Ge–GaAs superlattice grown by molecular beam epitaxyJournal of Applied Physics, 1983
- Atomic structure of the NiSi2/(111)Si interfacePhilosophical Magazine A, 1982
- Fault-free silicon at the silicon/sapphire interfaceApplied Physics Letters, 1982
- Structural Studies of Metal-Semiconductor Interfaces with High-Resolution Electron MicroscopyMRS Proceedings, 1982
- Lattice fringe imaging of modulated structuresPhilosophical Magazine A, 1981
- Cross-sectional transmission electron microscopy of silicon-silicide interfacesJournal of Applied Physics, 1981
- A high-resolution electron microscopy study of the Si-SiO2 interfaceApplied Physics Letters, 1978
- A study of the relationship between lattice fringes and lattice planes in electron microscope images of crystals containing defectsPhilosophical Magazine, 1971