SURFACE-POTENTIAL DEPENDENCE OF EPR CENTERS AT THE Si/SiO2 INTERFACE
- 1 January 1980
- book chapter
- Published by Elsevier
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Luminescence and ESR studies of defects in hydrogenated amorphous siliconSolid State Communications, 1980
- ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafersJournal of Applied Physics, 1979