Temperature Distribution in Silicon Ingots during Crystal Growth
- 1 May 1962
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 33 (5), 1899-1900
- https://doi.org/10.1063/1.1728861
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The thermal conductivity of germanium, silicon and indium arsenide from 40°C to 425°CPhilosophical Magazine, 1960
- Die Wärmeleitfähigkeit von Germanium bei hohen temperaturenJournal of Physics and Chemistry of Solids, 1959
- Some defects in crystals grown from the melt - I. Defects caused by thermal stressesProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1956
- CXXXV. Ambipolar thermodiffusion of electrons and holes in semiconductorsJournal of Computers in Education, 1955