Lifetimes for Excited Levels in Si I-Si IV
- 1 January 1980
- journal article
- Published by IOP Publishing in Physica Scripta
- Vol. 21 (6), 820-824
- https://doi.org/10.1088/0031-8949/21/6/007
Abstract
No abstract availableKeywords
This publication has 33 references indexed in Scilit:
- Extension of the Analysis of Quadruply Ionized Silicon (Si V)Physica Scripta, 1976
- Analysis of the 2p53s, 3p, 3d and 4s Configurations of Quadruply Ionized Silicon (Si V)Physica Scripta, 1976
- Radiative-lifetime measurements in Si II-Si VJournal of Physics B: Atomic and Molecular Physics, 1976
- Détermination théorique des durées de vie des niveaux 3s3p3 dans la séquence isoélectronique de Si IPhysica, 1974
- Radiative-lifetime and absolute-oscillator-strength studies for some resonance transitions of Si I, II, and IIIPhysical Review A, 1974
- Comments on Foil Effects in Beam-Foil Mean-Life MeasurementsPhysica Scripta, 1974
- OBSERVATIONAL EVIDENCE CONCERNING THE gƒ - VALUES OF SI II λ4128 AND λ 4130 ÅThe Astrophysical Journal, 1968
- Superposition of Configuration Results for SI IIThe Astrophysical Journal, 1968
- Gƒ-VALUES for Lines of the SI II SpectrumThe Astrophysical Journal, 1966
- Messung der absoluten Übergangswahrscheinlichkeiten einiger Silizium I-, Silizium II- sowie einiger Chlor I- und Chlor II-LinienThe European Physical Journal A, 1959