Generic miniband structure of graphene on a hexagonal substrate
Top Cited Papers
- 4 June 2013
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 87 (24), 245408
- https://doi.org/10.1103/physrevb.87.245408
Abstract
Using a general symmetry-based approach, we provide a classification of generic miniband structures for electrons in graphene placed on substrates with the hexagonal Bravais symmetry. In particular, we identify conditions at which the first moiré miniband is separated from the rest of the spectrum by either one or a group of three isolated mini Dirac points and is not obscured by dispersion surfaces coming from other minibands. In such cases, the Hall coefficient exhibits two distinct alternations of its sign as a function of charge carrier density.Keywords
All Related Versions
This publication has 24 references indexed in Scilit:
- Zero-energy modes and gate-tunable gap in graphene on hexagonal boron nitridePhysical Review B, 2012
- Graphene on incommensurate substrates: Trigonal warping and emerging Dirac cone replicas with halved group velocityPhysical Review B, 2012
- Integration of Hexagonal Boron Nitride with Quasi-freestanding Epitaxial Graphene: Toward Wafer-Scale, High-Performance DevicesACS Nano, 2012
- Emergence of superlattice Dirac points in graphene on hexagonal boron nitrideNature Physics, 2012
- BN/Graphene/BN Transistors for RF ApplicationsIEEE Electron Device Letters, 2011
- Chemical vapor deposition-assembled graphene field-effect transistor on hexagonal boron nitrideApplied Physics Letters, 2011
- Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room TemperatureNano Letters, 2011
- Local Electronic Properties of Graphene on a BN Substrate via Scanning Tunneling MicroscopyNano Letters, 2011
- Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitrideNature Materials, 2011
- Boron nitride substrates for high-quality graphene electronicsNature Nanotechnology, 2010