Interdiffusion of the group-III sublattice in In-Ga-As-P/In-Ga-As-P and In-Ga-As/In-Ga-As heterostructures
- 15 September 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 50 (11), 8071-8073
- https://doi.org/10.1103/physrevb.50.8071
Abstract
We present the results of a photoluminescence study of interdiffusion on the group-III sublattice in the ternary In-Ga-As/In-Ga-As and the quaternary In-Ga-As-P/In-Ga-As-P systems, both grown off InP substrates. We have shown that the diffusion obeys Fick’s law, and that over the temperature range 950 °C–650 °C, the diffusion coefficients of both the ternary and quaternary materials can be described by the equation D=exp(-/kT), where =3.4±0.2 eV and =3.9 /s. Within experimental error these values are identical to those previously measured for interdiffusion on the group V in the same material system.
Keywords
This publication has 2 references indexed in Scilit:
- Vacancy controlled interdiffusion of the group V sublattice in strained InGaAs/InGaAsP quantum wellsApplied Physics Letters, 1993
- The effects of ion implantation on the interdiffusion coefficients in InxGa1−xAs/GaAs quantum well structuresJournal of Applied Physics, 1993