Theoretical calculations of the Fermi level and of other parameters in phosphorus doped silicon at diffusion temperatures

Abstract

Taking into account the heavy doping effects (i.e., band tailing and impurity band formation) and high temperature effects, the Fermi level in lightly and heavily compensated phosphorus doped silicon, at normal diffusion temperatures is calculated numerically from the charge neutrality condition. The effective intrinsic carrier concentration is a function of the doping level and of the degree of compensation. Above discussed impurity concentration dependent results are used to calculate the impurity activity coefficient, the vacancy activity coefficient, and the concentration of the total number of vacancies as a function of doping and temperature.