Novel spectromicroscopy: Pt–GaP studies by spatially resolved internal photoemission with near-field optics

Abstract

The combination of internal photoemission and near-field optics is proposed as a generally applicable approach to study the lateral variations of solid interface properties such as energy barriers and electron-hole recombination rates. A successful test on Pt–GaP is described in which topographic and nontopographic phenomena are revealed, in particular recombination rate variations and small lateral changes of the Schottky barrier height.