Choice between FETs or Bipolar Transistors and Optimization of Their Working Points in Low Noise Preamplifiers for Fast Pulse Processing. Theory and Experimental Results
- 1 January 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 30 (1), 319-323
- https://doi.org/10.1109/tns.1983.4332278
Abstract
Theoretical and experimental investigation has been carried out to determine the best working conditions of single or parallel combinations of field-effect or bipolar transistors in low noise preamplifiers for processing times in the 10 ns range. The effects of diffusion capacitance and base spreading resistance in bipolar transistors have been put into evidence and a way of reducing the noise due to the latter is suggested and experimentally demonstrated.Keywords
This publication has 3 references indexed in Scilit:
- Analysis of low noise, bipolar transistor head amplifiers for high energy applications of silicon detectorsNuclear Instruments and Methods in Physics Research, 1982
- Time domain noise calculation for the common base current amplifier configurationNuclear Instruments and Methods in Physics Research, 1981
- Input Amplifiers for Optical PCM ReceiversBell System Technical Journal, 1974