Silicon epitaxy at low temperature, using UV cleaning in a reduced pressure CVD system
- 1 January 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (7), 408-409
- https://doi.org/10.1049/el:19880276
Abstract
Thin homoepitaxial silicon layers are grown in a reduced pressure (10–0.002 Torr), air cooled, horizontal CVD reactor, with a rapid thermal heating. A fast and efficient substrate cleaning at 800°C making use of irradiation of the substrate by deep UV radiation under hydrogen is reported.Keywords
This publication has 1 reference indexed in Scilit:
- Limited Reaction Processing: Silicon and III–V MaterialsMRS Proceedings, 1987