Localized states in inverted silicon-silicon dioxide interfaces
- 16 October 1973
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 6 (20), L379-L381
- https://doi.org/10.1088/0022-3719/6/20/001
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- The scattering of electrons by surface oxide charges and by lattice vibrations at the silicon-silicon dioxide interfaceSurface Science, 1972
- The influence of dielectric charge on the hole field-effect mobility in silicon inversion layersPhysics Letters A, 1972
- The nature of the electronic states of a disordered system. I. Localized statesJournal of Physics C: Solid State Physics, 1972
- The Size of Localized States Near the Mobility EdgeProceedings of the National Academy of Sciences, 1972
- Conduction in non-crystalline materialsPhilosophical Magazine, 1969
- Transport Properties of Electrons in Inverted Silicon SurfacesPhysical Review B, 1968
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967