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Process and device related scaling considerations for polysilicon emitter bipolar transistors
Home
Publications
Process and device related scaling considerations for polysilicon emitter bipolar transistors
Process and device related scaling considerations for polysilicon emitter bipolar transistors
HS
H. Schaber
H. Schaber
JB
J. Bieger
J. Bieger
TM
T.F. Meister
T.F. Meister
KE
K. Ehinger
K. Ehinger
RK
R. Kakoschke
R. Kakoschke
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1 January 1987
proceedings article
Published by
Institute of Electrical and Electronics Engineers (IEEE)
https://doi.org/10.1109/iedm.1987.191379
Abstract
No abstract available
Keywords
CRYSTALLIZATION
ATMOSPHERE
AMORPHOUS MATERIALS
BIPOLAR TRANSISTORS
ARGON
ANNEALING
BIPOLAR TRANSISTOR
HEAT TREATMENT
BORON
SILICON
Cited by 7 articles