Room-temperature excitonic optical nonlinearities of molecular beam epitaxially grown ZnSe thin films
- 18 January 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (3), 182-184
- https://doi.org/10.1063/1.99513
Abstract
Large optical nonlinearities have been observed in molecular beam epitaxially grown thin films of ZnSe at room temperature and at T=150 K. A comparison with a plasma theory indicates that in both cases exciton screening is the dominating mechanism for the nonlinearity. The maximum nonlinear index per excited electron‐hole pair at room temperature is comparable to that of bulk GaAs and GaAs‐AlGaAs multiple quantum wells. The measured absorption and nonlinear index spectra agree quite well with our calculated values.Keywords
This publication has 14 references indexed in Scilit:
- Optical nonlinearities of glasses doped with semiconductor microcrystallitesOptics Letters, 1987
- Effects of beam pressure ratios on film quality in MBE growth of ZnSeJournal of Crystal Growth, 1987
- Room-Temperature Optical Nonlinearities in GaAsPhysical Review Letters, 1986
- Wide-gap II-VI superlatticesIEEE Journal of Quantum Electronics, 1986
- A simple theory for the effects of plasma screening on the optical spectra of highly excited semiconductorsZeitschrift für Physik B Condensed Matter, 1986
- Room-temperature excitonic nonlinear-optical effects in semiconductor quantum-well structuresJournal of the Optical Society of America B, 1985
- Room temperature, visible wavelength optical bistability in ZnSe interference filtersOptics Communications, 1984
- Electron theory of the optical properties of laser-excited semiconductorsProgress in Quantum Electronics, 1984
- Optical bistability in semiconductorsApplied Physics Letters, 1979
- An optical logic element for integrated optics in a nonlinear semiconductor interferometerJournal of Applied Spectroscopy, 1978