Abstract
The general theory of wall motion in ferroelectric switching (M. Hayashi: J. Phys. Soc. Japan 33 (1972) 616) is applied to BaTiO 3 . The theory successfully accounts for the absolute value as well as the field dependence of the wall velocity measured over a wide range of field. The theory also explains the field dependence of the orientation of the growing domains. It is shown on the basis of a microscopic theory that the energy density of the side boundary of a two- or one-dimensional nucleus is smaller than that of a 180° wall.