Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical Doping
- 1 February 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (2A), L152
- https://doi.org/10.1143/jjap.30.l152
Abstract
P-type ZnSe layers have been grown by molecular beam epitaxy using nitrogen radical doping. We have employed Pt as the electrode material for p-type ZnSe. The Pt electrodes markedly reduced contact resistances. The p-type conduction was confirmed by Hall measurement. Carrier concentration was 4.4×1015 cm-3. Hall mobility was as high as 86 cm2/V·s because of good crystallinity. The p-type ZnSe layers exhibited the 2.616-eV emission from recombination between free electrons and acceptor holes (FA) in room-temperature photoluminescence measurement. The FA emission provides evidence that the layers are p-type ZnSe.Keywords
This publication has 11 references indexed in Scilit:
- Electrical characterization of p-type ZnSeApplied Physics Letters, 1989
- Achievement of low-resistivity p-type ZnSe and the role of twinningJournal of Applied Physics, 1989
- Growth of p- and n-type ZnSe by molecular beam epitaxyJournal of Crystal Growth, 1989
- Effect of biaxial strain on exciton luminescence of heteroepitaxial ZnSe layersPhysical Review B, 1988
- Molecular beam epitaxial growth of nitrogen-doped ZnSe with ion doping techniqueJournal of Crystal Growth, 1988
- Characteristics of Cl-doped ZnSe layers grown by molecular-beam epitaxyJournal of Applied Physics, 1987
- Blue light emission from ZnSe p-n junctionsJournal of Applied Physics, 1985
- Surface Properties of II-VI CompoundsPhysical Review B, 1967
- The Thermionic Emission of PlatinumPhysical Review B, 1936
- The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various TemperaturesPhysical Review B, 1931