SiGe-on-insulator substrate using SiGe alloy grown Si(001)

Abstract

Low-energy oxygen ion (25 keV ${\mathrm{O}}^{\mathrm{+}}$ ) implantation was performed on a pseudomorphic ${\mathrm{Si}}_{\text{1−x}}{\mathrm{Ge}}_x/\mathrm{Si}\text{(001)}$ of uniform composition in an attempt to create a SiGe-on-insulator (SiGe-OI) substrate using the separation-by-implanted-oxygen technique. Choosing a small Ge composition $\text{(<0.3)}$ was found to be essential to achieving a SiGe-OI geometry of structural integrity.