Minority Carrier Lifetime in Uniaxially Stressed Germanium
- 1 January 1965
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 4 (1)
- https://doi.org/10.1143/jjap.4.72
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Effect of Mechanical Stress on p-n Junction Device CharacteristicsJournal of Applied Physics, 1964
- Anisotropic Stress Effect of Silicon pn JunctionsJapanese Journal of Applied Physics, 1964
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949