The importance of neutral base recombination in compromising the gain of Si/SiGe heterojunction bipolar transistors
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (8), 1973-1976
- https://doi.org/10.1109/16.119045
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
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