Study of Electron Lifetime in p‐Si
- 1 January 1967
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 21 (1), 423-429
- https://doi.org/10.1002/pssb.19670210142
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Recombination Properties of Gold in SiliconPhysical Review B, 1958
- Lifetime in-Type SiliconPhysical Review B, 1958
- Electron-Hole Recombination Statistics in Semiconductors through Flaws with Many Charge ConditionsPhysical Review B, 1958
- Statistics of the Charge Distribution for a Localized Flaw in a SemiconductorPhysical Review B, 1957
- Lifetime of Electrons in-Type SiliconPhysical Review B, 1955
- Transient Response of a p-n JunctionJournal of Applied Physics, 1954
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952