Chemical Vapor Deposition of Silicon Carbide Using a Novel Organometallic Precursor
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- The adsorption of H2 and D2 on Fe(110): I. Helium scattering as a probe of adsorptionSurface Science, 1988
- Epitaxial growth of 3C-SiC on Si by low-pressure chemical vapor depositionApplied Physics Letters, 1986
- The Preparation of Cyclic Siliconmethylene CompoundsThe Journal of Organic Chemistry, 1964