Low-temperature cleaning of Si and growth of GaAs on Si by hydrogen plasma-assisted metalorganic molecular-beam epitaxy
- 1 February 1989
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 95 (1-4), 91-95
- https://doi.org/10.1016/0022-0248(89)90358-8
Abstract
No abstract availableKeywords
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