Initial Stage and Domain Structure of GaAs Grown on Si(100) by Molecular Beam Epitaxy
- 1 February 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (2A), L114-116
- https://doi.org/10.1143/jjap.26.l114
Abstract
The initial stage of GaAs epitaxial growth on Si(100) has been studied by RHEED and AES. On exposure to a As4 flux, the Si surface is covered with one or two monolayers of As which are stable up to 700°C, while Ga on Si desorbs even at 500°C. There are two kinds of Si-As reconstruction, which depend on the temperature of Si exposed to As4 flux. One is 1×2 for high temperature (>600°C) and the other is 2×1 for low temperature (<450°C) when the Si substrate has 2×1 reconstruction. The surface reconstructions of GaAs grown on Si(100)-As 1×2 and Si(100)-As 2×1 are perpendicular to each other, which indicates that the domain direction of GaAs to Si substrate is different depending on the initial growth temperature.Keywords
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