Strain measurements of SiGeC heteroepitaxial layers on Si(001) using ion beam analysis

Abstract

The strain in SiGeC heteroepitaxialfilmsgrown on Si(001) substrates by chemical vapor deposition is quantified using ion channeling. Rutherford backscattering spectrometry was used to quantify the Ge concentration as well as the film thickness, nuclear resonance elastic ion scattering was used to quantify the C concentration, and ion channeling was utilized to measure film quality and C substitutionality. Channeling angular scans across an off‐normal major axis were used to quantify the strain. The results confirm that addition of C compensates for the strain introduced by Ge.