ELECTROMIGRATION EFFECTS IN ALUMINUM FILM ON SILICON SUBSTRATES
- 1 August 1967
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 11 (3), 85-87
- https://doi.org/10.1063/1.1755047
Abstract
A new nondestructive method is reported to investigate electromigration‐induced void formation in aluminum stripes on silicon substrates. X‐ray topography and optical microscopy are employed to characterize void nucleation at or below the film surface. Results are presented to show the correlation between x‐ray and optical images of void structures in an aluminum stripe after dc current flow.Keywords
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