Calculation of optical matrix elements in Gallium Arsenide
- 31 July 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 39 (3), 407-409
- https://doi.org/10.1016/0038-1098(81)90628-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Deep levels in semiconductorsAdvances in Physics, 1980
- Photoionisation of impurities with deep levels in gallium arsenideJournal of Physics C: Solid State Physics, 1980
- Deep impurities in semiconductors. I. Evanescent states and complex band structureJournal of Physics C: Solid State Physics, 1980
- Photoionisation of deep impurity levels in semiconductorsJournal of Physics C: Solid State Physics, 1980
- The electronic structure of impurities and other point defects in semiconductorsReviews of Modern Physics, 1978
- On the photoionization of deep impurity centers in semiconductorsSolid State Communications, 1965