35% efficient nonconcentrating novel silicon solar cell
- 4 May 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (18), 2240-2242
- https://doi.org/10.1063/1.107042
Abstract
An energy conversion efficiency of 35% was obtained at 1-sun, air mass 1.5 for a novel silicon cell. The critical feature of the cell structure is the inclusion of local defect layers near a p-n junction. The local defect layers were proven to hold the key to achieving the exceptionally high efficiency of the novel cell fabricated via noncomplex processing.Keywords
This publication has 11 references indexed in Scilit:
- Proton-implanted new type silicon material subjected to two-step furnace annealingNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- 24% efficient silicon solar cellsApplied Physics Letters, 1990
- Novel semiconductor substrate formed by hydrogen ion implantation into siliconApplied Physics Letters, 1989
- Photovoltaic measurement of bandgap narrowing in moderately doped siliconSolid-State Electronics, 1983
- High-efficiency p+-n-n+ back-surface-field silicon solar cellsApplied Physics Letters, 1978
- Optical and photoconductive properties of discharge-produced amorphous siliconJournal of Applied Physics, 1977
- Electronic properties of amorphous silicon in solar cell operationIEEE Transactions on Electron Devices, 1977
- Amorphous silicon solar cellApplied Physics Letters, 1976
- Impurity photovoltaic effect in siliconEnergy Conversion, 1970
- Fine Structure in the Absorption-Edge Spectrum of SiPhysical Review B, 1958