Photoluminescence at Dislocations in GaAs
- 28 October 1974
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 33 (18), 1082-1084
- https://doi.org/10.1103/physrevlett.33.1082
Abstract
Photoluminescence measurements with high spatial and spectral resolution on -type GaAs at helium temperatures show the reduction of radiative quantum efficiency immediately at individual deformation-induced dislocations to be orders of magnitude stronger than near grown-in dislocations.
Keywords
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